Datasheet > M24C08-TWBN6

M24C08-TWBN6

更新时间： 2024-09-21 09:48:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
17页	141K
描述
8KX1 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.25 MM LEAD FRAME, SKINNY, PLASTIC, DIP-8

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M24C08-TWBN6 数据手册

M24C16, M24C08

M24C04, M24C02, M24C01

16/8/4/2/1 Kbit Serial I²C Bus EEPROM

■ Two Wire I C Serial Interface

Supports 400 kHz Protocol

■ Single Supply Voltage:

– 4.5V to 5.5V for M24Cxx

– 2.5V to 5.5V for M24Cxx-W

– 1.8V to 3.6V for M24Cxx-R

■ Hardware Write Control

■ BYTE and PAGE WRITE (up to 16 Bytes)

■ RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

PSDIP8 (BN)

0.25 mm frame

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behaviour

■ 1 Million Erase/Write Cycles (minimum)

■ 40 Year Data Retention (minimum)

SO8 (MN)

150 mil width

TSSOP8 (DW)

169 mil width

DESCRIPTION

These electrically erasable programmable memo-

ry (EEPROM) devices are fabricated with STMi-

croelectronics’

High

Endurance,

Single

Polysilicon, CMOS technology. This guarantees

an endurance typically well above one million

Erase/Write cycles, with a data retention of

40 years. The memories are organised as 2048/

1024 x 8 bit (M24C16, M24C08) and 512/256/128

x 8 bit (M24C04, M24C02, M24C01), and operate

with a power supply down to 2.5 V (for the -W ver-

Figure 1. Logic Diagram

Table 1. Signal Names

E0-E2

SDA

E0, E1, E2

SDA

Chip Enable Inputs

M24Cxx

Serial Data/Address Input/

Output

SCL

Serial Clock

Write Control

Supply Voltage

Ground

AI02033

March 1999

1/17

12 3 4 5 6 7...17

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