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M24C08-WBN3/G PDF预览

M24C08-WBN3/G

更新时间: 2024-11-22 09:58:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
28页 525K
描述
1KX8 I2C/2-WIRE SERIAL EEPROM, PDIP8, PLASTIC, DIP-8

M24C08-WBN3/G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:compliant风险等级:5.65
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.27 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:5.33 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):10 ms

M24C08-WBN3/G 数据手册

 浏览型号M24C08-WBN3/G的Datasheet PDF文件第2页浏览型号M24C08-WBN3/G的Datasheet PDF文件第3页浏览型号M24C08-WBN3/G的Datasheet PDF文件第4页浏览型号M24C08-WBN3/G的Datasheet PDF文件第5页浏览型号M24C08-WBN3/G的Datasheet PDF文件第6页浏览型号M24C08-WBN3/G的Datasheet PDF文件第7页 
M24C16, M24C08  
M24C04, M24C02, M24C01  
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM  
FEATURES SUMMARY  
Two-Wire I²C Serial Interface  
Supports 400kHz Protocol  
Figure 1. Packages  
Single Supply Voltage:  
2.5 to 5.5V for M24Cxx-W  
1.8 to 5.5V for M24Cxx-R  
Write Control Input  
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Protection  
More than 1 Million Erase/Write Cycles  
More than 40-Year Data Retention  
Packages  
PDIP8 (BN)  
ECOPACK® (RoHS compliant)  
SO8 (MN)  
150 mil width  
Table 1. Product List  
Reference  
Part Number  
M24C16-W  
M24C16  
M24C08  
M24C04  
M24C02  
M24C01  
M24C16-R  
M24C08-W  
M24C08-R  
M24C04-W  
M24C04-R  
M24C02-W  
M24C02-R  
M24C01-W  
M24C01-R  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
UFDFPN8 (MB)  
2x3mm² (MLP)  
January 2006  
1/28  

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