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M24C08-TWDW1T PDF预览

M24C08-TWDW1T

更新时间: 2024-11-10 21:01:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
17页 139K
描述
8KX1 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.169 INCH, TSSOP-8

M24C08-TWDW1T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.169 INCH, TSSOP-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.73最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DMMRJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.4 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:1功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX1输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:I2C
最大待机电流:5e-7 A子类别:EEPROMs
最大压摆率:0.001 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWAREBase Number Matches:1

M24C08-TWDW1T 数据手册

 浏览型号M24C08-TWDW1T的Datasheet PDF文件第2页浏览型号M24C08-TWDW1T的Datasheet PDF文件第3页浏览型号M24C08-TWDW1T的Datasheet PDF文件第4页浏览型号M24C08-TWDW1T的Datasheet PDF文件第5页浏览型号M24C08-TWDW1T的Datasheet PDF文件第6页浏览型号M24C08-TWDW1T的Datasheet PDF文件第7页 
M24C16, M24C08  
M24C04, M24C02, M24C01  
16/8/4/2/1 Kbit Serial I²C Bus EEPROM  
2
Two Wire I C Serial Interface  
Supports 400 kHz Protocol  
Single Supply Voltage:  
– 4.5V to 5.5V for M24Cxx  
– 2.5V to 5.5V for M24Cxx-W  
– 1.8V to 3.6V for M24Cxx-R  
Hardware Write Control  
8
1
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
PSDIP8 (BN)  
0.25 mm frame  
Automatic Address Incrementing  
8
8
Enhanced ESD/Latch-Up Behaviour  
1 Million Erase/Write Cycles (minimum)  
40 Year Data Retention (minimum)  
1
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
DESCRIPTION  
These electrically erasable programmable memo-  
ry (EEPROM) devices are fabricated with STMi-  
croelectronics’  
High  
Endurance,  
Single  
Polysilicon, CMOS technology. This guarantees  
an endurance typically well above one million  
Erase/Write cycles, with a data retention of  
40 years. The memories are organised as 2048/  
1024 x 8 bit (M24C16, M24C08) and 512/256/128  
x 8 bit (M24C04, M24C02, M24C01), and operate  
with a power supply down to 2.5 V (for the -W ver-  
Figure 1. Logic Diagram  
V
CC  
3
Table 1. Signal Names  
E0-E2  
SDA  
E0, E1, E2  
SDA  
Chip Enable Inputs  
M24Cxx  
Serial Data/Address Input/  
Output  
SCL  
WC  
SCL  
WC  
Serial Clock  
Write Control  
Supply Voltage  
Ground  
V
V
CC  
SS  
V
SS  
AI02033  
April 1999  
1/17  

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