5秒后页面跳转
M24164-MN6T PDF预览

M24164-MN6T

更新时间: 2024-09-16 15:39:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
16页 117K
描述
16KX1 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

M24164-MN6T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SO-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.83
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1DDDMMMR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:1
湿度敏感等级:1功能数量:1
端子数量:8字数:16384 words
字数代码:16000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16KX1输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.00002 A
子类别:EEPROMs最大压摆率:0.002 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

M24164-MN6T 数据手册

 浏览型号M24164-MN6T的Datasheet PDF文件第2页浏览型号M24164-MN6T的Datasheet PDF文件第3页浏览型号M24164-MN6T的Datasheet PDF文件第4页浏览型号M24164-MN6T的Datasheet PDF文件第5页浏览型号M24164-MN6T的Datasheet PDF文件第6页浏览型号M24164-MN6T的Datasheet PDF文件第7页 
M24164  
16 Kbit Serial I2C BUS EEPROM  
PRELIMINARY DATA  
TWO WIRE I2C SERIAL INTERFACE  
SUPPORTS 400kHz PROTOCOL  
1 MILLION ERASE/WRITE CYCLES  
40 YEARS DATA RETENTION  
2ms TYPICAL PROGRAMMING TIME  
SINGLE SUPPLY VOLTAGE:  
8
8
– 4.5V to 5.5V for M24164  
– 2.5V to 5.5V for M24164-W  
1
1
PSDIP8 (BN)  
0.25mm Frame  
SO8 (MN)  
150mil Width  
– 1.8V to 5.5V for M24164-R  
HARDWARE WRITE CONTROL  
BYTE and PAGE WRITE (up to 16 BYTES)  
BYTE, RANDOM and SEQUENTIAL READ  
MODES  
SELF TIMED PROGRAMMING CYCLE  
AUTOMATIC ADDRESS INCREMENTING  
Figure 1. Logic Diagram  
ENHANCED ESD/LATCH-UP  
PERFORMANCES  
DESCRIPTION  
The M24164 is a 16 Kbit EEPROM. The memory  
is an electrically erasable programmable memory  
(EEPROM) fabricated with STMicroelectronics’s  
High Endurance Single Polysilicon CMOS technol-  
ogy which guarantees an endurance typically well  
above one million erase/write cycles with a data  
retention of 40 years. The "-W" version operate with  
a power supply value as low as 2.5V and the "-R"  
version operate down to 1.8V.  
V
CC  
3
E0-E2  
SDA  
Both Plastic Dual-in-Line and Plastic Small Outline  
packages are available.  
M24164  
SCL  
WC  
Table 1. Signal Names  
E0-E2  
SDA  
SCL  
WC  
Chip Enable Inputs  
Serial Data Address Input/Output  
Serial Clock  
V
SS  
AI02264  
Write Control  
VCC  
Supply Voltage  
VSS  
Ground  
January 1999  
1/16  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与M24164-MN6T相关器件

型号 品牌 获取价格 描述 数据表
M24164-R STMICROELECTRONICS

获取价格

16 Kbit Serial I2C BUS EEPROM
M24164-RBN1 STMICROELECTRONICS

获取价格

16KX1 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.25 MM LEAD FRAME, SKINNY, PLASTIC, DIP-8
M24164-RBN6 STMICROELECTRONICS

获取价格

16KX1 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.25 MM LEAD FRAME, SKINNY, PLASTIC, DIP-8
M24164-RMN1 STMICROELECTRONICS

获取价格

16KX1 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8
M24164-RMN1T STMICROELECTRONICS

获取价格

16KX1 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8
M24164-RMN6 STMICROELECTRONICS

获取价格

16KX1 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8
M24164-RMN6T STMICROELECTRONICS

获取价格

16KX1 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8
M24164-W STMICROELECTRONICS

获取价格

16 Kbit Serial I2C BUS EEPROM
M24164-WBN1 STMICROELECTRONICS

获取价格

16 Kbit Serial I2C BUS EEPROM
M24164-WBN1T STMICROELECTRONICS

获取价格

16 Kbit Serial I2C BUS EEPROM