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M24164-WBN6 PDF预览

M24164-WBN6

更新时间: 2024-11-09 14:52:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
16页 117K
描述
16KX1 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.25 MM LEAD FRAME, SKINNY, PLASTIC, DIP-8

M24164-WBN6 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.92
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1DDDMMMR
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
长度:9.55 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX1
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:5.9 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.001 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWAREBase Number Matches:1

M24164-WBN6 数据手册

 浏览型号M24164-WBN6的Datasheet PDF文件第2页浏览型号M24164-WBN6的Datasheet PDF文件第3页浏览型号M24164-WBN6的Datasheet PDF文件第4页浏览型号M24164-WBN6的Datasheet PDF文件第5页浏览型号M24164-WBN6的Datasheet PDF文件第6页浏览型号M24164-WBN6的Datasheet PDF文件第7页 
M24164  
16 Kbit Serial I2C BUS EEPROM  
PRELIMINARY DATA  
TWO WIRE I2C SERIAL INTERFACE  
SUPPORTS 400kHz PROTOCOL  
1 MILLION ERASE/WRITE CYCLES  
40 YEARS DATA RETENTION  
2ms TYPICAL PROGRAMMING TIME  
SINGLE SUPPLY VOLTAGE:  
8
8
– 4.5V to 5.5V for M24164  
– 2.5V to 5.5V for M24164-W  
1
1
PSDIP8 (BN)  
0.25mm Frame  
SO8 (MN)  
150mil Width  
– 1.8V to 5.5V for M24164-R  
HARDWARE WRITE CONTROL  
BYTE and PAGE WRITE (up to 16 BYTES)  
BYTE, RANDOM and SEQUENTIAL READ  
MODES  
SELF TIMED PROGRAMMING CYCLE  
AUTOMATIC ADDRESS INCREMENTING  
Figure 1. Logic Diagram  
ENHANCED ESD/LATCH-UP  
PERFORMANCES  
DESCRIPTION  
The M24164 is a 16 Kbit EEPROM. The memory  
is an electrically erasable programmable memory  
(EEPROM) fabricated with STMicroelectronics’s  
High Endurance Single Polysilicon CMOS technol-  
ogy which guarantees an endurance typically well  
above one million erase/write cycles with a data  
retention of 40 years. The "-W" version operate with  
a power supply value as low as 2.5V and the "-R"  
version operate down to 1.8V.  
V
CC  
3
E0-E2  
SDA  
Both Plastic Dual-in-Line and Plastic Small Outline  
packages are available.  
M24164  
SCL  
WC  
Table 1. Signal Names  
E0-E2  
SDA  
SCL  
WC  
Chip Enable Inputs  
Serial Data Address Input/Output  
Serial Clock  
V
SS  
AI02264  
Write Control  
VCC  
Supply Voltage  
VSS  
Ground  
January 1999  
1/16  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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