是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | 0.150 INCH, PLASTIC, SO-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.81 |
Is Samacsys: | N | 最大时钟频率 (fCLK): | 0.4 MHz |
数据保留时间-最小值: | 40 | 耐久性: | 1000000 Write/Erase Cycles |
I2C控制字节: | 1DDDMMMR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 长度: | 4.9 mm |
内存密度: | 16384 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2KX8 | |
输出特性: | OPEN-DRAIN | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 260 |
电源: | 3/5 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 串行总线类型: | I2C |
最大待机电流: | 0.000001 A | 子类别: | EEPROMs |
最大压摆率: | 0.001 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 2.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 3.9 mm | 最长写入周期时间 (tWC): | 10 ms |
写保护: | HARDWARE | Base Number Matches: | 1 |
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