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M24164-WMN1 PDF预览

M24164-WMN1

更新时间: 2024-11-05 23:16:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
21页 137K
描述
16 Kbit Serial I2C BUS EEPROM

M24164-WMN1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SO-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.81
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1DDDMMMRJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX8
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.001 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWAREBase Number Matches:1

M24164-WMN1 数据手册

 浏览型号M24164-WMN1的Datasheet PDF文件第2页浏览型号M24164-WMN1的Datasheet PDF文件第3页浏览型号M24164-WMN1的Datasheet PDF文件第4页浏览型号M24164-WMN1的Datasheet PDF文件第5页浏览型号M24164-WMN1的Datasheet PDF文件第6页浏览型号M24164-WMN1的Datasheet PDF文件第7页 
M24164  
16 Kbit Serial I²C Bus EEPROM  
with 1 Inverting and 2 Non-Inverting Chip Enable Lines  
FEATURES SUMMARY  
2
Two Wire I C Serial Interface  
Figure 1. Packages  
Supports 400 kHz Protocol  
Single Supply Voltage:  
– 4.5V to 5.5V for M24164  
– 2.5V to 5.5V for M24164-W  
Write Control Input  
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
8
1
PDIP8 (BN)  
0.25 mm frame  
8
1
SO8 (MN)  
150 mil width  
October 2001  
1/21  

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