Datasheet > M12L64164A-6BIG2M

M12L64164A-6BIG2M

更新时间： 2024-02-23 18:44:37

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器
页数	文件大小	规格书
45页	1259K
描述
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54

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ESMT

M12L64164A (2M)

Operation Temperature Condition -40°C~85°C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Voltage on any pin relative to VSS

Voltage on VDD supply relative to VSS

Storage temperature

SYMBOL

VIN, VOUT

VDD, VDDQ

TSTG

VALUE

-1.0 ~ 4.6

-55 ~ +150

UNIT

°C

Power dissipation

IOS

Short circuit current

Note:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITION

Recommended operating conditions (Voltage referenced to VSS = 0V, T_A= -40 to 85 °C )

PARAMETER

Supply voltage

SYMBOL

VDD, VDDQ

VIH

MIN

3.0

2.0

-0.3

2.4

TYP

MAX

UNIT

NOTE

3.3

3.6

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

VDD+0.3

VIL

0.8

VOH

IOH = -2mA

IOL = 2mA

VOL

0.4

IIL

-5

μ A

Output leakage current

IOL

-5

μ A

Note:

1. V_IH(max) = 4.6V AC for pulse width ≤ 10ns acceptable.

2. V_IL(min) = -1.5V AC for pulse width ≤ 10ns acceptable.

3. Any input 0V ≤ V^IN≤ VDD, all other pins are not under test = 0V.

4. D^outis disabled, 0V ≤ VOUT ≤ VDD.

CAPACITANCE (V_DD= 3.3V, T_A= 25 °C , f = 1MHz)

PARAMETER

Input capacitance (A0 ~ A11, BA0 ~ BA1)

Input capacitance

SYMBOL

MIN

MAX

UNIT

CIN1

CIN2

(CLK, CKE, CS , RAS , CAS , WE &

L(U)DQM)

Data input/output capacitance (DQ0 ~ DQ15)

COUT

Elite Semiconductor Memory Technology Inc.

Publication Date: Jun. 2012

Revision: 1.2 3/45

1 234 5 6 7...45

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