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M12L64322A_08 PDF预览

M12L64322A_08

更新时间: 2024-01-08 22:19:01
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器
页数 文件大小 规格书
47页 785K
描述
512K x 32 Bit x 4 Banks Synchronous DRAM

M12L64322A_08 数据手册

 浏览型号M12L64322A_08的Datasheet PDF文件第2页浏览型号M12L64322A_08的Datasheet PDF文件第3页浏览型号M12L64322A_08的Datasheet PDF文件第4页浏览型号M12L64322A_08的Datasheet PDF文件第5页浏览型号M12L64322A_08的Datasheet PDF文件第6页浏览型号M12L64322A_08的Datasheet PDF文件第7页 
ESMT  
M12L64322A  
Revision History  
Revision 0.1(Dec. 28 1998)  
-Original  
Revision 0.2(Jan. 29 1999)  
-Add page 45 "Packing Dimension"  
Revision 0.3(Apr. 20 2000)  
-Modify 6 tss from 2 to 1.5ns.(Page 7)  
Revision 0.4(May. 09 2001)  
- 64ms refresh period (4K cycle) --> 15.6μs refresh interval (P.1)  
- Add Packing Dimension Title 86-LEAD TSOP(II) DRAM(400mil).  
- Modify P.39  
Revision 1.0(Jun. 08 2001)  
- Modify ICC2NS, ICC6, tRDL, tOH spec  
Revision 1.1(Oct. 21 2002)  
- Add –5 spec, Delete -8 spec  
Revision 1.2(Nov. 11 2002)  
- Modify tCH, tCL spec  
Revision 1.3(Dec. 24 2002)  
- Delete -5 spec (AC/DC)  
Revision 1.4(Jan. 17 2003)  
- Modify tRDL to meet currently spec in the market  
Revision 1.5(Feb. 17 2003)  
- Typing error  
Revision 1.6(Oct. 29 2003)  
- Modify refresh period.  
Revision 1.7(May. 10 2004)  
- M12L64322A-6T tRDL=12ns  
- M12L64322A-7T tRDL=14ns  
Revision 1.8(May. 02 2005)  
- Add pb-free to ordering information  
- Recommend to add 4096 auto refresh before and after self refresh  
Revision 1.9(Nov. 04 2005)  
- Modify tCC / tRCD spec  
Revision 2.0(Dec. 08 2005)  
- Add –5T speed grade  
Revision 2.1(Mar. 08 2006)  
- Modify Inch Dimension Max. A2 from 0.011 to 0.041  
Revision 2.2(Nov. 27 2006)  
- Add BGA 90ball 8x13mm package  
Revision 2.3(Mar. 02 2007)  
- Delete BGA ball name of packing dimensions  
Revision 2.4(Feb. 13 2008)  
- Modify tSAC(max) = 10 => 6ns (for -5, CL=2)  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Feb. 2008  
Revision: 2.4  
1/47  

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