LX5510LQ-TR

更新时间： 2024-11-11 13:09:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		放大器功率放大器
页数	文件大小	规格书
7页	626K
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LX5510LQ-TR 数据手册

C O N F I D E N T I A L

LX5510

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

I N T E G R A T E D P R O D U C T S

PRELIMINARY DATA SHEET

KEY FEATURES

DESCRIPTION

Advanced InGaP HBT

2.4 – 2.5GHz Operation

Single-Polarity 3.3V Supply

Low Quiescent Current Icq

~65mA

The LX5510 is a power amplifier For +19dBm OFDM output power

optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a

the 2.4-2.5GHz frequency range. The low EVM (Error-Vector Magnitude) of

PA is implemented as a two-stage 3.0%, and consumes 120mA total DC

monolithic microwave integrated current with the nominal 3.3V bias.

circuit (MMIC) with active bias and With increased bias of 4.5V EVM is ~

Power Gain ~20dB @ 2.45GHz

and Pout = 19dBm

input/output pre-matching.

5% at 23dBm.

Total Current 120mA for Pout =

19dBm @ 2.45GHz OFDM

EVM ~ 3.0% for 64QAM /

54Mbps and Pout = 19dBm

Small Footprint (3x3mm²)

Low Profile (0.9mm)

The device is manufactured with an The LX5510 is available in a 16-pin

InGaP/GaAs Heterojunction Bipolar 3mmx3mm micro-lead package (MLP).

Transistor

(HBT)

process The compact footprint, low profile, and

(MOCVD). With single low voltage excellent thermal capability of the MLP

supply of 3.3V 20dB power gain package makes the LX5510 an ideal

between 2.4-2.5GHz, at

quiescent current of 65mA.

low solution for medium-gain power

amplifier requirements for IEEE

802.11b/g applications

APPLICATIONS

IEEE 802.11b/g

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

PRODUCT HIGHLIGHT

PACKAGE ORDER

INFO

Plastic MLPQ

16 pin

LX5510-LQ

Note: Available in Tape & Reel.

Append the letter “T” to the part number.

(i.e. LX5510-LQT)

Microsemi

Page 1

Rev. 0.3g, 2003-05-08

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

12 3 4 5 6 7

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