Datasheet > LX5512E_05

LX5512E_05

更新时间： 2024-11-11 11:40:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		放大器功率放大器
页数	文件大小	规格书
11页	576K
描述
InGaP HBT 2.4 – 2.5 GHz Power Amplifier

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LX5512E_05 数据手册

LX5512E

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

PRODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

Advanced InGaP HBT

2.4 – 2.5GHz Operation

Single-Polarity 3.3V Supply

Low Quiescent Current Icq

~50mA

The LX5512E is a power amplifier

For 19dBm OFDM output power

optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a

the 2.4-2.5 GHz frequency range. The low EVM (Error-Vector Magnitude) of

PA is implemented as a three-stage 3 %, and consumes 130 mA total DC

monolithic microwave integrated current.

Power Gain ~34dB @ 2.45GHz

and Pout = 19dBm

circuit (MMIC) with active bias and

The LX5512E is available in a 16-pin

input/output pre-matching. The device 3mmx3mm micro-lead package (MLP).

is manufactured with an InGaP/GaAs The compact footprint, low profile, and

Heterojunction Bipolar Transistor excellent thermal capability of the MLP

(HBT) IC process (MOCVD). It package makes the LX5512E an ideal

operates at a single low voltage supply solution for high-gain power amplifier

of 3.3V with 34 dB power gain requirements for IEEE 802.11b/g

Total Current 130mA for Pout =

19dBm @ 2.45GHz OFDM

EVM ~ 3.0% for 64QAM /

54Mbps and Pout = 19dBm

Small Footprint (3 x 3 mm²)

Low Profile (0.9mm)

between 2.4-2.5GHz, at

quiescent current of 50 mA.

low

applications.

APPLICATIONS

IEEE 802.11b/g

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

PRODUCT HIGHLIGHT

PACKAGE ORDER INFO

Plastic MLPQ

16 pin

RoHS Compliant / Pb-free

Transition DC: 0418

LX5512ELQ

Note: Available in Tape & Reel. Append the letters

“TR” to the part number. (i.e. LX5512ELQ-TR)

This device is classified as ESD Level

0 in

accordance with JESD22-A114-B, (HBM) testing.

Appropriate ESD procedures should be observed

when handling this device.

Rev. 2.0c, 2005-08-18

Microsemi

Page 1

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

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与LX5512E_05相关器件

型号	品牌	获取价格	描述	数据表
LX5512ELQ	MICROSEMI	获取价格	InGaP HBT 2.4 – 2.5 GHz Power Amplifier
LX5512E-LQ	MICROSEMI	获取价格	InGaP HBT 2.4 - 2.5 GHz Power Amplifier
LX5512E-LQT	MICROSEMI	获取价格	Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 3 X 3 MM, PLASTIC, MLPQ-16
LX5512ELQ-TR	MICROSEMI	获取价格	InGaP HBT 2.4 – 2.5 GHz Power Amplifier
LX5514	MICROSEMI	获取价格	InGaP HBT 2.3 - 2.5 GHz Power Amplifier
LX5514LL	MICROSEMI	获取价格	InGaP HBT 2.3 - 2.5 GHz Power Amplifier
LX5514LL-TR	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 2300MHz Min, 2500MHz Max, 2 X 2 MM, ROHS COMPLIANT, PLAS
LX5514MLL	MICROSEMI	获取价格	Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 1 Func, BIPolar, 1.50 X 1.50 MM
LX5516	MICROSEMI	获取价格	InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module
LX5516LL	MICROSEMI	获取价格	InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module