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LMN200B02

更新时间： 2024-09-19 03:51:43
品牌 Logo 应用领域
美台 - DIODES 晶体开关晶体管
页数 文件大小 规格书
10页 518K
描述
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR

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LMN200B02 数据手册

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Lead-free Green  
LMN200B02  
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET  
WITH GATE PULL DOWN RESISTOR  
General Description  
·
LMN200B02 is best suited for applications where the load  
needs to be turned on and off using control circuits like  
micro-controllers, comparators etc. particularly at a point  
of load. It features a discrete pass transistor with stable  
VCE(SAT) which does not depend on the input voltage and  
can support continuous maximum current of 200 mA . It  
also contains a discrete N-MOSFET that can be used as  
control. This N-MOSFET also has a built-in pull down  
resistor at its gate. The component can be used as a part  
of a circuit or as a stand alone discrete device.  
6
5
4
1
2
3
Features  
Fig. 1: SOT-363  
·
·
·
·
·
·
Voltage Controlled Small Signal Switch  
N-MOSFET with Gate Pull-Down Resistor  
Surface Mount Package  
B_Q1  
5
C_Q1  
6
S_Q2  
4
Ideally Suited for Automated Assembly Processes  
Lead Free By Design/ROHS Compliant (Note 1)  
"Green" Device (Note 2)  
C
DDTB142JU_DIE  
Q1  
Mechanical Data  
B
R2  
R3  
37K  
G
PNP  
470  
S
·
·
Case: SOT-363  
E
R1  
Q2  
NMOS  
10K  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
DSNM6047_DIE  
D
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
3
2
1
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
G_Q2  
E_Q1  
D_Q2  
·
·
·
Marking & Type Code Information: See Last Page  
Ordering Information: See Last Page  
Fig. 2 Schematic and Pin Configuration  
Weight: 0.016 grams (approximate)  
Refere  
Sub-Component P/N  
nce  
R3  
Device Type  
PNP Transistor  
N-MOSFET  
R1 (NOM)  
R2 (NOM)  
Figure  
(NOM)  
DDTB142JU_DIE  
Q1  
Q2  
10K  
470  
¾
2
2
DSNM6047_DIE (with Gate  
Pull-Down Resistor)  
¾
¾
37K  
@ T = 25°C unless otherwise specified  
Maximum Ratings, Total Device  
A
Characteristic  
Power Dissipation (Note 3)  
Power Derating Factor above 125°C  
Output Current  
Symbol  
Pd  
Value  
200  
Unit  
mW  
Pder  
1.6  
mW/°C  
mA  
Iout  
200  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Tj,Tstg  
Junction Operation and Storage Temperature Range  
-55 to +150  
°C  
Thermal Resistance, Junction to Ambient Air (Equivalent to  
One Heated Junction of PNP Transistor)  
RqJA  
625  
°C/W  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30658 Rev. 4 - 2  
1 of 10  
LMN200B02  
www.diodes.com  
ã Diodes Incorporated  
1234567...10

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