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LMN200B02_1

更新时间： 2024-11-08 11:37:23
品牌 Logo 应用领域
美台 - DIODES 晶体开关晶体管
页数 文件大小 规格书
10页 245K
描述
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET

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LMN200B02_1 数据手册

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LMN200B02  
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET  
WITH GATE PULL DOWN RESISTOR  
Please click here to visit our online spice models database.  
General Description  
LMN200B02 is best suited for applications where the load needs to  
be turned on and off using control circuits like micro-controllers,  
comparators etc. particularly at a point of load. It features a  
discrete pass transistor with stable VCE(SAT) which does not  
depend on the input voltage and can support continuous maximum  
current of 200 mA . It also contains a discrete N-MOSFET that can  
be used as control. This N-MOSFET also has a built-in pull down  
resistor at its gate. The component can be used as a part of a  
circuit or as a stand alone discrete device.  
6
5
4
1
2
3
Features  
Fig. 1: SOT-363  
•
•
•
•
•
•
Voltage Controlled Small Signal Switch  
N-MOSFET with Gate Pull-Down Resistor  
Surface Mount Package  
Ideally Suited for Automated Assembly Processes  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
B_Q1  
5
C_Q1  
6
S_Q2  
4
C
DDTB142JU_DIE  
Q1  
B
R2  
R3  
37K  
G
PNP  
470  
Mechanical Data  
S
E
R1  
Q2  
NMOS  
10K  
•
•
Case: SOT-363  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
DSNM6047_DIE  
D
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
3
2
1
E_Q1  
G_Q2  
D_Q2  
Fig. 2 Schematic and Pin Configuration  
•
•
•
Marking Information: See Page 8  
Ordering Information: See Page 8  
Weight: 0.006 grams (approximate)  
Sub-Component P/N  
Reference  
Device Type  
R1 (NOM)  
R2 (NOM)  
R3 (NOM) Figure  
DDTB142JU_DIE  
Q1  
PNP Transistor  
10K  
470  
2
⎯
DSNM6047_DIE (with Gate Pull-Down  
Resistor)  
Q2  
N-MOSFET  
37K  
2
⎯
⎯
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 3)  
Symbol  
PD  
Value  
200  
Unit  
mW  
mW/°C  
mA  
Power Derating Factor above 125°C  
Output Current  
1.6  
Pder  
200  
Iout  
Thermal Characteristics  
@TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Operating and Storage Temperature Range  
-55 to +150  
°C  
TJ,TSTG  
Thermal Resistance, Junction to Ambient Air (Equivalent to  
One Heated Junction of PNP Transistor) (Note 3)  
625  
°C/W  
Rθ  
JA  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30658 Rev. 7 - 2  
1 of 9  
www.diodes.com  
LMN200B02  
© Diodes Incorporated  
1234567...10

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