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LMN400B01

更新时间： 2024-09-19 03:51:43
品牌 Logo 应用领域
美台 - DIODES 晶体开关晶体管
页数 文件大小 规格书
10页 553K
描述
400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR

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LMN400B01 数据手册

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LMN400B01  
Lead-free Green  
400mA LOAD SWITCH FEATURING PNP  
TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR  
General Description  
·
LMN400B01 is best suited for applications where the load  
needs to be turned on and off using control circuits like  
micro-controllers, comparators etc. particularly at a point of  
load. It features a discrete pass transistor with stable  
VCE(SAT) which does not depend on input voltage and can  
support continuous maximum current of 400 mA . It also  
contains a discrete N-MOSFET with gate pull-down resistor  
that can be used as control. The component devices can  
be used as a part of a circuit or as a stand alone discrete  
device.  
6
5
4
1
2
3
Fig. 1: SOT-26  
Features  
·
·
·
·
·
·
Voltage Controlled Small Signal Switch  
B_Q1  
5
C_Q1  
6
S_Q2  
4
N-MOSFET with Gate Pull-Down Resistor  
Surface Mount Package  
Ideally Suited for Automated Assembly Processes  
Lead Free By Design/ROHS Compliant (Note 1)  
"Green" Device (Note 2)  
C
DDTB122LU_DIE  
Q1  
PNP  
R2  
B
R3  
220  
37K  
G
S
E
Mechanical Data  
·
·
R1 10K  
Q2  
NMOSFET  
Case: SOT-26  
D
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
DSNM6047_DIE  
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
1
2
3
E_Q1  
G_Q2  
D_Q2  
Terminals: Finish - Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Fig. 2 Schematic and Pin Configuration  
·
·
·
Marking & Type Code Information: See Last Page  
Ordering Information: See Last Page  
Weight: 0.016 grams (approx.)  
Sub-Components  
DDTB122LU_DIE  
DSNM6047_DIE (with Gate Pull-Down Resistor)  
Reference  
Device Type  
R1 (NOM) R2 (NOM) R3 (NOM) Figure  
Q1  
Q2  
PNP Transistor  
N-MOSFET  
10K  
220  
¾
2
2
¾
¾
37K  
@ TA = 25°C unless otherwise specified  
Maximum Ratings, Total Device  
Characteristic  
Power Dissipation (Note 3)  
Power Derating Factor above 100°C  
Output Current  
Symbol  
Pd  
Value  
Unit  
300  
2.4  
mW  
mW/°C  
mA  
Pder  
Iout  
400  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Tj, Tstg  
Junction Operation and Storage Temperature Range  
-55 to +150  
417  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to  
one heated junction of PNP transistor)  
RqJA  
°C/W  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30699 Rev. 5 - 2  
1 of 10  
LMN400B01  
www.diodes.com  
ã Diodes Incorporated  
1234567...10

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