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LM747EN PDF预览

LM747EN

更新时间: 2024-11-19 22:47:03
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器放大器电路光电二极管
页数 文件大小 规格书
8页 165K
描述
Dual Operational Amplifier

LM747EN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP14,.3
针数:14Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.29Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.21 µA25C 时的最大偏置电流 (IIB):0.08 µA
标称共模抑制比:95 dB频率补偿:YES
最大输入失调电压:4000 µVJESD-30 代码:R-PDIP-T14
JESD-609代码:e0长度:19.18 mm
低-失调:NO负供电电压上限:-18 V
标称负供电电压 (Vsup):-20 V功能数量:2
端子数量:14最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-5/+-20 V
认证状态:Not Qualified座面最大高度:5.08 mm
最小摆率:0.3 V/us标称压摆率:0.7 V/us
子类别:Operational Amplifier最大压摆率:5 mA
供电电压上限:18 V标称供电电压 (Vsup):20 V
表面贴装:NO技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:1500 kHz最小电压增益:10000
宽度:7.62 mmBase Number Matches:1

LM747EN 数据手册

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November 1994  
LM747  
Dual Operational Amplifier  
General Description  
Features  
Y
No frequency compensation required  
The LM747 is a general purpose dual operational amplifier.  
The two amplifiers share a common bias network and power  
supply leads. Otherwise, their operation is completely inde-  
pendent.  
Y
Short-circuit protection  
Y
Wide common-mode and differential voltage ranges  
Low power consumption  
Y
Y
Y
Additional features of the LM747 are: no latch-up when in-  
put common mode range is exceeded, freedom from oscilla-  
tions, and package flexibility.  
No latch-up  
Balanced offset null  
The LM747C/LM747E is identical to the LM747/LM747A  
except that the LM747C/LM747E has its specifications  
a
guaranteed over the temperature range from 0 C to 70 C  
§
§
b
a
instead of 55 C to 125 C.  
§
§
Connection Diagrams  
Metal Can Package  
Dual-In-Line Package  
TL/H/11479–5  
TL/H/11479–4  
Order Number LM747CN or LM747EN  
See NS Package Number N14A  
Order Number LM747H  
See NS Package Number H10C  
*VaA and VaB are internally connected.  
C
1995 National Semiconductor Corporation  
TL/H/11479  
RRD-B30M115/Printed in U. S. A.  

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