Datasheet > LL4150

LL4150

更新时间： 2024-11-28 22:31:15

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
3页	52K
描述
Silicon Epitaxial Planar Diodes

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获取价格

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LL4150 数据手册

LL4150

Vishay Telefunken

Silicon Epitaxial Planar Diodes

Features

Low forward voltage drop

High forward current capability

Applications

94 9371

High speed switch and general purpose use in com-

puter and industrial applications

Absolute Maximum Ratings

T = 25 C

Parameter

Repetitive peak reverse voltage

Reverse voltage

Test Conditions

Type

Symbol

RRM

Value

Unit

Peak forward surge current

Forward current

Average forward current

Power dissipation

Junction temperature

Storage temperature range

t =1 s

600

300

500

FSM

V =0

FAV

200

–65...+200

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

on PC board 50mmx50mmx1.6mm

Symbol

thJA

Value

500

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Test Conditions

Type Symbol Min Typ Max Unit

Forward voltage

I =1mA

0.54

0.66

0.76

0.82

0.87

0.62

0.74

0.86

0.92

1.0

I =10mA

I =50mA

I =100mA

I =200mA

Reverse current

V =50V

100

2.5

V =50V, T =150 C

Diode capacitance

Reverse recovery time I =I =10...100mA, i =0.1xI ,

V =0, f=1MHz, V =50mV

R =100

Document Number 85558

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (3)

12 3

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