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LL4151 PDF预览

LL4151

更新时间: 2024-11-28 22:47:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 54K
描述
Silicon Epitaxial Planar Diodes

LL4151 数据手册

 浏览型号LL4151的Datasheet PDF文件第2页浏览型号LL4151的Datasheet PDF文件第3页浏览型号LL4151的Datasheet PDF文件第4页 
LL4151  
Vishay Telefunken  
Silicon Epitaxial Planar Diodes  
Features  
Electrical data identical with the device 1N4151  
Applications  
94 9371  
Extreme fast switches  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Test Conditions  
Type  
Symbol  
V
RRM  
Value  
75  
50  
Unit  
V
V
V
R
Peak forward surge current  
Repetitive peak forward current  
Forward current  
Average forward current  
Power dissipation  
t =1 s  
I
2
500  
300  
150  
500  
175  
A
p
FSM  
I
mA  
mA  
mA  
mW  
C
FRM  
I
F
V =0  
R
I
FAV  
P
V
Junction temperature  
T
j
Storage temperature range  
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type Symbol Min Typ Max Unit  
Forward voltage  
Reverse current  
I =50mA  
V
0.88  
1
50  
50  
V
nA  
A
F
F
V =50V  
I
I
R
R
V =50V, T =150 C  
R
j
R
Breakdown voltage I =5 A, t /T=0.01, t =0.3ms  
V
(BR)  
75  
V
R
p
p
Diode capacitance V =0, f=1MHz, V =50mV  
C
D
2
4
2
pF  
ns  
ns  
R
HF  
Reverse recovery  
time  
I =I =10mA, i =1mA  
t
rr  
t
rr  
F
R
R
I =10mA, V =6V, i =0.1xI , R =100  
F
R
R
R
L
Document Number 85559  
Rev. 3, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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