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LET9060STR PDF预览

LET9060STR

更新时间: 2024-11-21 13:09:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频
页数 文件大小 规格书
5页 39K
描述
60W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

LET9060STR 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:11 weeks
风险等级:8.42Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:80 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):12 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:165 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):170 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

LET9060STR 数据手册

 浏览型号LET9060STR的Datasheet PDF文件第2页浏览型号LET9060STR的Datasheet PDF文件第3页浏览型号LET9060STR的Datasheet PDF文件第4页浏览型号LET9060STR的Datasheet PDF文件第5页 
LET9060C  
RF POWER TRANSISTORS  
Ldmos Enhanced Technology  
PRELIMINARY DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
P  
= 60 W WITH 17.3 dB gain @ 945 MHz  
OUT  
BeO FREE PACKAGE  
HIGH GAIN  
M243  
epoxy sealed  
ESD PROTECTION  
ORDER CODE  
BRANDING  
LET9060C  
LET9060C  
DESCRIPTION  
The LET9060C is an N-Channel enhancement-mode  
lateral Field-Effect RF power transistor, designed for  
high gain broadband, commercial and industrial  
applications. It operates at 28 V in common source  
mode at frequencies up to 1.0 GHz. LET9060C  
boasts the excellent gain, linearity and reliability of the  
ST latest LDMOS technology. Its superior  
performances make it an ideal solution for base  
station applications.  
PIN CONNECTION  
1
3
2
1. Drain  
2. Gate  
3. Source  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C)  
CASE  
Symbol  
Parameter  
Value  
65  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
(BR)DSS  
V
-0.5 to +15  
7
V
GS  
I
D
A
P
Power Dissipation (@ Tc = 70°C)  
Max. Operating Junction Temperature  
Storage Temperature  
118  
W
°C  
°C  
DISS  
Tj  
200  
T
-65 to +150  
STG  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
1.1  
°C/W  
November, 4 2002  
1/5  

LET9060STR 替代型号

型号 品牌 替代类型 描述 数据表
LET9060S STMICROELECTRONICS

完全替代

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9060C STMICROELECTRONICS

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RF POWER TRANSISTORS Ldmos Enhanced Technology

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