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LET9060S PDF预览

LET9060S

更新时间: 2024-11-24 22:31:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频
页数 文件大小 规格书
10页 298K
描述
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9060S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:8.41
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:80 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):12 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:165 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):170 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

LET9060S 数据手册

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LET9060S  
RF POWER TRANSISTORS  
Ldmos Enhanced Technology in Plastic Package  
PRELIMINARY DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
P  
= 60 W with 17 dB gain @ 945 MHz / 26V  
OUT  
NEW RF PLASTIC PACKAGE  
HIGH GAIN  
PowerSO-10RF  
(straight lead)  
ESD PROTECTION  
ORDER CODE  
LET9060S  
BRANDING  
LET9060S  
AVAILABLE IN TAPE & REEL with TR SUFFIX  
DESCRIPTION  
The LET9060S is a common source N-Channel,  
enhancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 26 V in common source mode at frequencies up  
to 1 GHz. LET9060S boasts the excellent gain,  
linearity and reliability of ST’s latest LDMOS  
technology mounted in the first true SMD plastic  
RF power package, PowerSO-10RF. LET9060S’s  
superior linearity performance makes it an ideal  
solution for base station applications.  
PIN CONNECTION  
SOURCE  
GATE  
DRAIN  
The PowerSO-10 plastic package, designed to  
offer high reliability, is the first ST JEDEC  
approved, high power SMD package. It has been  
specially optmized for RF needs and offers  
excellent RF performances and ease of assembly.  
Mounting recommendations are available in  
www.st.com/rf/ (look for application note AN1294)  
ABSOLUTE MAXIMUM RATINGS (T  
= 25 °C)  
CASE  
Symbol  
Parameter  
Value  
65  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
(BR)DSS  
V
-0.5 to +15  
7
V
GS  
I
D
A
P
Power Dissipation  
170  
W
°C  
°C  
DISS  
Tj  
Max. Operating Junction Temperature  
165  
T
Storage Temperature  
-65 to +150  
STG  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
0.7  
°C/W  
March, 25 2003  
1/10  

LET9060S 替代型号

型号 品牌 替代类型 描述 数据表
LET9060STR STMICROELECTRONICS

完全替代

60W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

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