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LET9085 PDF预览

LET9085

更新时间: 2024-11-20 22:31:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频场效应晶体管光电二极管放大器局域网
页数 文件大小 规格书
4页 38K
描述
RF POWER TRANSISTORS Ldmos Enhanced Technology

LET9085 技术参数

生命周期:Obsolete包装说明:0.370 X 0.780, PLASTIC, M265, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDFM-F2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):186 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

LET9085 数据手册

 浏览型号LET9085的Datasheet PDF文件第2页浏览型号LET9085的Datasheet PDF文件第3页浏览型号LET9085的Datasheet PDF文件第4页 
LET9085  
RF POWER TRANSISTORS  
Ldmos Enhanced Technology  
TARGET DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
IS-95 CDMA PERFORMANCES  
P
OUT  
= 20 W  
EFF. = 28 %  
EDGE PERFORMANCES  
P
OUT  
= 35 W  
EFF. = 35 %  
M265  
GSM PERFORMANCES  
epoxy sealed  
P
= 75 W  
OUT  
ORDER CODE  
BRANDING  
LET9085  
EFF. = 55 %  
LET9085  
EXCELLENT THERMAL STABILITY  
BeO FREE PACKAGE  
INTERNAL INPUT MATCHING  
ESD PROTECTION  
PIN CONNECTION  
1
DESCRIPTION  
The LET9085 is a common source N-Channel en-  
hancement-mode lateral Field-Effect RF power  
transistor designed for broadband commercial and  
industrial applications at frequencies up to 1.0  
GHz. The LET9085 is designed for high gain and  
broadband performance operating in common  
source mode at 26 V. Its internal matching makes  
it ideal for base station applications requiring high  
linearity.  
2
3
1. Drain  
2. Source  
3. Gate  
ABSOLUTE MAXIMUM RATINGS (T  
= 25 °C)  
CASE  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
65  
(BR)DSS  
V
-0.5 to +15  
12  
V
GS  
I
D
A
P
Power Dissipation (@ Tc = 70 °C)  
Max. Operating Junction Temperature  
Storage Temperature  
186  
W
°C  
°C  
DISS  
Tj  
200  
T
-65 to +150  
STG  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
0.7  
°C/W  
January, 28 2003  
1/4  

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