Datasheet > LBSS138V3.3T3G

LBSS138V3.3T3G

更新时间： 2024-10-29 01:12:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	396K
描述
Dual Integrated Circuit N-Channel/PN Duals

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中文翻译

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技术参数
数据手册

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LBSS138V3.3T3G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.16	配置：	Single
最大漏极电流 (Abs) (ID)：	0.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.225 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

LBSS138V3.3T3G 数据手册

LESHAN RADIO COMPANY, LTD.

LBSS138V3.3T1G

DualIntegratedCircuit

S-LBSS138V3.3T1G

N-Channel/PNDuals

We declare that the material of product compliance with RoHS requirements.

•

S- Prefix for Automotive and Other Applications Requiring Unique Site and

Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

MAXIMUM RATING

Symbol

V_DSS

Value

Unit

Vdc

Rating

SC-74

Drain–to–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

V_GS

± 20

– Continuous @ T = 25°C

I_D

I_DM

200

800

– Pulsed Drain Current (t ≤ 10 µs)

Q₁

Total Power Dissipation @ T = 25°C

P_D

225

Operating and Storage Temperature

Range

T_J,

– 55 to

150

°C

stg

Thermal Resistance – Junction–to–Ambient

R_θJA

T_L

556

260

°C/W

°C

Q₂

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

MARKING DIAGRAM

ORDERING INFORMATION

Device

Marking

Shipping

LBSS138V3.3T1G

S-LBSS138V3.3T1G

H02

3000/Tape&Reel

H02

LBSS138V3.3T3G

S-LBSS138V3.3T3G

10000/Tape&Reel

H02

H02 = Device Code

(Q2)

ELECTRICAL CHARACTERISTICS

= Month Code

(T = 25°C unless otherwise noted,

V = 0.9 V Max. @ I = 10 mA for all types)

Symbol

Parameter

Reverse Zener Voltage @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Leakage Current @ V

Reverse Voltage

Forward Current

Forward Voltage @ I

Maximum Temperature Coefficient of V

Zener Voltage Regulator

Max. Capacitance @V = 0 and f = 1 MHz

Rev .O 1/3

12 3

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