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LBSS4240LT3G PDF预览

LBSS4240LT3G

更新时间: 2024-10-29 01:17:39
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 386K
描述
General Purpose Transistors NPN Silicon

LBSS4240LT3G 数据手册

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LBSS4240LT1G  
S-LBSS4240LT1G  
General Purpose Transistors NPN Silicon  
1. FEATURES  
Low collector-emitter saturation voltage  
High current capability  
Improved device reliability due to reduced heat generation  
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
S- prefix for automotive and other applications requiring  
SOT23  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
2. APPLICATIONS  
Supply line switching circuits  
Battery management applications  
DC/DC converter applications  
Strobe flash units  
Heavy duty battery powered equipment (motor and lamp drivers).  
3. DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
LBSS4240LT1G  
LBSS4240LT3G  
ZE  
3000/Tape&Reel  
10000/Tape&Reel  
ZE  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Limits  
Unit  
V
Collector-Emitter Voltage  
Collector-Base voltage  
Emitter-Base Voltage  
40  
40  
V
5
2
V
Collector current-continuoun  
Total power dissipation  
Junction temperature  
A
PD  
0.3  
W
TJ  
150  
Storage temperature  
TSTG  
-65~+150  
5. THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
417  
Unit  
K/W  
K/W  
(Note 1)  
(Note 2)  
Thermal resistance from junction to ambient  
in free air  
RθJA  
260  
1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.  
2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm².  
Leshan Radio Company, LTD.  
Rev.B Oct. 2018  
1/5  

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