Datasheet > LBSS5240LT3G

LBSS5240LT3G

更新时间： 2024-10-29 01:12:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	614K
描述
General Purpose Transistors

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数据手册

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LBSS5240LT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

-40V,-2A Low VCE(sat) PNP Silicon

FEATURES

• Low collector-emitter saturation voltage

• High current capability

• Improved device reliability due to reduced heat

generation

LBSS5240LT1G

S-LBSS5240LT1G

• Replacement for SOT89/SOT223 standard packaged

transistors.

• We declare that the material of product compliance with

RoHS requirements.

•

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

SOT– 23

APPLICATIONS

• Supply line switching circuits

COLLECTOR

• Battery management applications

• DC/DC converter applications

• Strobe flash units

BASE

• Heavy duty battery powered equipment (motor and lamp

drivers).

EMITTER

DESCRIPTION

PNP low V_CEsattransistor in a SOT23 plastic package.

NPN complement: LBSS4240LT1G .

ORDERING INFORMATION

Device

Marking

Shipping

LBSS5240LT1G

3000/Tape & Reel

S-LBSS5240LT1G

10000/Tape & Reel

LBSS5240LT3G

S-LBSS5240LT3G

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V _CEO

–40

–5.0

–2

Collector–Base Voltage

Emitter–Base Voltage

V _CBO

V _EBO

I _C

Collector Current — Continuous

power dissipation

P _D

T _j

0.3

°C

Junction temperature

Storage temperature

150

T _stg

-65 ~+150

THERMAL CHARACTERISTICS

Symbol

Parameter

Conditions

Value

417

Unit

K/W

in free air;note 1

in free air;note 2

thermal resistance from

junction to ambient

th(j-a)

260

Notes:

1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.

2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm.

Rev.O 1/5

12 3 4 5

中文翻译

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