Datasheet > LBSS84LT3G

LBSS84LT3G

更新时间： 2024-10-28 04:20:55

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	314K
描述
Power MOSFET F30 mAmps, 50 Volts

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替代型号

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LBSS84LT3G 数据手册

LESHAN RADIO COMPANY, LTD.

Power MOSFET

130 mAmps, 50 Volts

P–Channel SOT–23

LBSS84LT1G

These miniature surface mount MOSFETs reduce power loss

conserve energy, making this device ideal for use in small power

management circuitry. Typical applications are dc–dc converters, load

switching, power management in portable and battery–powered

products such as computers, printers, cellular and cordless telephones.

• ^{Energy Efficient}

• ^{Miniature SOT–23 Surface Mount Package Saves Board Space}

• ^{Pb-Free Package is available.}

SOT –23

3 Drain

Marking Diagram

Gate

Source

MAXIMUM RATINGS (TJ = 25^°C unless otherwise noted)

Symbol

V_DSS

Value

Unit

Vdc

Rating

W = Work Week

Drain–to–Source Voltage

Gate–to–Source Voltage – Continuous

V_GS

Drain Current

– Continuous @ T_A= 25°C

– Pulsed Drain Current (t_p≤ 10 µs)

I_D

I_DM

130

520

ORDERING INFORMATION

Total Power Dissipation @ T_A= 25°C

P_D

225

Device

Package

Shipping

3000/Tape&Reel

LBSS84LT1G

LBSS84LT3G

SOT-23

Operating and Storage Temperature

Range

T_J, T

– 55 to

150

°C

stg

SOT-23 10000/Tape&Reel

Thermal Resistance – Junction–to–Ambient

R_θJA

T_L

556

260

°C/W

°C

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

1/4

12 3 4 5 6

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LBSS84LT3G 替代型号

型号	品牌	替代类型	描述	数据表
BSS84Q-7-F	DIODES	功能相似	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Meta
BSS84Q-13-F	DIODES	功能相似	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Meta
LBSS84LT1G	LRC	功能相似	Power MOSFET F30 mAmps, 50 Volts

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