Datasheet > LBSS139LT3G

LBSS139LT3G

更新时间： 2024-10-29 01:21:31

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
7页	1093K
描述
Power MOSFET200 mAmps, 50 Volts NâChannel SOT-23

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LBSS139LT3G 数据手册

LBSS139LT1G

S-LBSS139LT1G

Power MOSFET

200 mAmps, 50 Volts N–Channel SOT-23

1. FEATURES

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

SOT23(TO-236)

●

Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low

voltage applications.

●

ESD Protected:1500V

2. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LBSS139LT1G

LBSS139LT3G

3000/Tape&Reel

10000/Tape&Reel

3. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VDSS

VGS

Limits

Unit

Vdc

Drain–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

±20

Vdc

mAdc

– Continuous TA = 25°C

– Pulsed (tp≤10μs)

200

800

IDM

4. THERMAL CHARACTERISTICS

Parameter

Symbol

Limits

Unit

Total Device Dissipation,

225

FR−4 Board (Note 1) @ TA = 25ºC

Derate above 25ºC

1.8

mW/ºC

ºC/W

Thermal Resistance,

RΘJA

556

Junction–to–Ambient(Note 1)

Junction and Storage temperature

Maximum Lead Temperature for Solder

Purposes, for 10 seconds

TJ,Tstg −55∼+150

TL 260

ºC

1. FR–4 = 1.0×0.75×0.062 in.

Leshan Radio Company, LTD.

Rev.C Jan 2016

1/7

12 3 4 5 6 7

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