Datasheet > LBSS8402DW1T1G

LBSS8402DW1T1G

更新时间： 2024-10-28 05:41:35

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
9页	634K
描述
FETs and Diodes

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中文翻译

获取价格

数据手册

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LBSS8402DW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Features

Low On-Resistance: R_DS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Complementary Pair

LBSS8402DW1T1G

Also Available in Lead Free Version

Mechanical Data

Case: SOT-363, Molded Plastic

Case material - UL Flammability Rating

Classification 9ꢀV-0

SC-88/SOT-363

Moisture sensitivity: Level 1 per J-STD-0±0A

Terminals: Solderable per MIL-STD-±0±,

Method ±08

TOP VIEW

D₁

G₂

S₂

Also Available in Lead Free Plating (Matte Tin

Finish). Please see Ordering Information,

Note ꢀ, on Page 5

Q₁

Q₂

Terminal Connections: See Diagram

Pb-Free package is available

Weight: 0.008 grams (approx.)

S₁

G₁

D₂

@ T_A= ±5°C unless otherwise specified

Maximum Ratings - Total Device

Characteristic

Power Dissipation (Note 1)

Symbol

P_d

Value

±00

Units

°C/W

°C

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

6±5

T_j, T_STG

-55 to +150

@ T_A= ±5°C unless otherwise specified

Maximum Ratings N-CHANNEL - Q₁, 2N7002 Section

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

V_DGR

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

±±0

±ꢀ0

V_GSS

115

800

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

I_D

@ T_A= ±5°C unless otherwise specified

Maximum Ratings P-CHANNEL - Q₂, BSS84 Section

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_DGR

V_GSS

I_D

Value

-50

Units

-50

Drain-Gate Voltage R_GS£ ±0KW

Gate-Source Voltage

Continuous

±±0

Drain Current (Note 1)

-130

Note:

1. Device mounted on FR-ꢀ PCB, 1 inch x 0.85 inch x 0.06± inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP0±001, which can be found on our website at http://www.diodes.com/datasheets/ap0±001.pdf.

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