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LBSS260DW1T1G PDF预览

LBSS260DW1T1G

更新时间: 2024-10-29 01:21:35
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 432K
描述
N-Channel 60-V Power Mosfet

LBSS260DW1T1G 数据手册

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LBSS260DW1T1G  
S-LBSS260DW1T1G  
N-Channel 60-V Power Mosfet  
1. FEATURES  
High speed switch  
ESD protected  
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
SC88(SOT-363)  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
2. APPLICATION  
Portable appliances  
Load switch appliances  
3. DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
LBSS260DW1T1G  
LBSS260DW1T3G  
J3  
J3  
3000/Tape&Reel  
10000/Tape&Reel  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VDSS  
VGS  
Limits  
Unit  
Vdc  
Drain–Source Voltage  
60  
Gate–to–Source Voltage – Continuous  
Drain Current  
±20  
Vdc  
mAdc  
– Continuous TA = 25°C  
– Pulsed (tp10μs)  
ID  
200  
800  
IDM  
5. THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Limits  
Unit  
Total Device Dissipation,  
PD  
380  
mW  
FR−4 Board (Note 1) @ TA = 25ºC  
Derate above 25ºC  
3.05  
328  
mW/ºC  
ºC/W  
Thermal Resistance,  
RΘJA  
Junction–to–Ambient(Note 1)  
Junction and Storage temperature  
Maximum Lead Temperature for Solder  
Purposes, for 10 seconds  
TJ,Tstg −55+150  
TL 260  
ºC  
ºC  
1. FR–4 = 1.0×0.75×0.062 in.  
Leshan Radio Company, LTD.  
Rev.O Feb. 2017  
1/5  

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