Datasheet > LBSS139WT3G

LBSS139WT3G

更新时间： 2024-10-29 00:33:03

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	539K
描述
Power MOSFET 200 mAmps, 50 Volts NâChannel SCâ70

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技术参数
数据手册

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LBSS139WT3G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.65	配置：	Single
最大漏极电流 (Abs) (ID)：	0.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.15 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

LBSS139WT3G 数据手册

LESHAN RADIO COMPANY, LTD.

Power MOSFET

200 mAmps, 50 Volts

N–Channel SC–70

LBSS139WT1G

Typical applications are dc–dc converters, power management in

portable and battery–powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

• Low Threshold Voltage (V _{GS(th): 0.5V...1.5V) makes it ideal for low}

voltage applications

SOT–323 / SC – 70

• Miniature SC–70 Surface Mount Package saves board space

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

200 mAMPS

50 VOLTS

ESD Protected:1500V

•

R _DS(on)= 3.5 W

N - Channel

MAXIMUM RATINGS (T_{A = 25 C unless otherwise noted)}

Symbol

V_DSS

Value

Unit

Vdc

Rating

Drain–to–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

V_GS

± 20

– Continuous @ T = 25°C

I_D

I_DM

200

800

– Pulsed Drain Current (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

P_D

150

MARKING DIAGRAM

& PIN ASSIGNMENT

Operating and Storage Temperature

Range

T_J,

– 55 to

150

°C

stg

Thermal Resistance – Junction–to–Ambient

R_θJA

T_L

833

260

°C/W

°C

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

J2 = Device Code

= Month Code

ORDERING INFORMATION

Device

Package

Shipping

LBSS139WT1G

LBSS139WT3G

SC-70

3000 Tape & Reel

10000 Tape & Reel

Rev .O 1/5

12 3 4 5

中文翻译

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