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KTX401E PDF预览

KTX401E

更新时间: 2024-09-14 22:32:03
品牌 Logo 应用领域
KEC 晶体二极管晶体管开关局域网
页数 文件大小 规格书
2页 72K
描述
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)

KTX401E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F5
元件数量:1端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz

KTX401E 数据手册

 浏览型号KTX401E的Datasheet PDF文件第2页 
KTX401E  
SEMICONDUCTOR  
EPITAXIAL PLANAR NPN TRANSISTOR  
SILICON EPITAXIAL PLANAR TYPE DIODE  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
ULTRA HIGH SPEED SWITCHING APPLICATION.  
B
B1  
FEATURES  
Including two(TR, Diode) devices in TESV.  
(Thin Extreme Super mini type with 5pin.)  
Simplify circuit design.  
1
2
3
5
4
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
_
1.6+0.05  
Reduce a quantity of parts and manufacturing process.  
_
+
B1  
C
1.2 0.05  
0.50  
_
D
H
J
0.2+0.05  
EQUIVALENT CIRCUIT (TOP VIEW)  
Marking  
_
+
0.5 0.05  
_
+
0.12 0.05  
P
P
5
4
P
5
Type Name  
5
4
Q1  
D1  
h
FE  
Rank  
1. D ANODE  
1
2. Q EMITTER  
C
1
3. Q BASE  
1
4. Q COLLECTOR  
1
5. D CATHODE  
1
1
2
3
1
2
3
MARK SPEC  
Type  
TESV  
KTX401E  
Q1 hFE Rank : Y  
CD  
KTX401E  
Q1 hFE Rank : GR  
CE  
Mark  
MAXIMUM RATINGS (Ta=25)  
TRANSISTOR Q1  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
60  
UNIT  
V
V
50  
5
V
Collector Current  
150  
IB  
Base Current  
30  
PC  
Collector Power Dissipation  
Junction Temperature  
100  
Tj  
150  
Tstg  
Storage Temperature Range  
-55~150  
DIODE D1  
CHARACTERISTIC  
SYMBOL  
VRM  
VR  
RATING  
UNIT  
V
Maximum (Peak) Reverse Voltage  
Reverse Voltage  
85  
80  
V
IFM  
Maximum (Peak) Forward Current  
Average Forward Current  
Surge Current (10mS)  
Power Dissipation  
300  
A
IO  
100  
IFSM  
PD  
2
-
Tj  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
2002. 1. 24  
Revision No : 1  
1/2  

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