5秒后页面跳转
KTX402U PDF预览

KTX402U

更新时间: 2024-09-14 22:32:03
品牌 Logo 应用领域
KEC 晶体二极管开关晶体管光电二极管局域网
页数 文件大小 规格书
4页 420K
描述
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)

KTX402U 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.77Is Samacsys:N
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G5元件数量:1
端子数量:5封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

KTX402U 数据手册

 浏览型号KTX402U的Datasheet PDF文件第2页浏览型号KTX402U的Datasheet PDF文件第3页浏览型号KTX402U的Datasheet PDF文件第4页 
KTX402U  
SEMICONDUCTOR  
EPITAXIAL PLANAR NPN TRANSISTOR  
SCHOTTKY BARRIER TYPE DIODE  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
LOW VOLTAGE HIGH SPEED SWITCHING.  
B
FEATURES  
B1  
Including two(TR, Diode) devices in USV.  
(Ultra Super Mini type with 5 leads)  
Simplify circuit design.  
1
2
3
5
4
DIM MILLIMETERS  
_
A
A1  
B
2.00+0.20  
_
+
1.3 0.1  
_
+
2.1 0.1  
D
_
1.25+ 0.1  
B1  
C
Reduce a quantity of parts and manufacturing process.  
0.65  
0.2+0.10/-0.05  
0-0.1  
D
G
EQUIVALENT CIRCUIT (TOP VIEW)  
Marking  
_
0.9+0.1  
H
T
0.15+0.1/-0.05  
5
4
T
Type Name  
4
5
G
D1  
Q1  
1. D ANODE  
1
2. Q BASE  
1
CG  
3. Q EMITTER  
1
4. Q COLLECTOR  
1
5. D CATHODE  
1
1
2
3
1
2
3
MARK SPEC  
Type  
USV  
KTX402U  
Q1 hFE Rank : Y  
CG  
KTX402U  
Q1 hFE Rank : GR  
CJ  
Mark  
MAXIMUM RATINGS (Ta=25  
TRANSISTOR Q1  
)
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
60  
50  
V
V
5
Collector Current  
150  
30  
IB  
Emitter Current  
PC  
Collector Power Dissipation  
Junction Temperature  
100  
150  
-55~125  
Tj  
Tstg  
Storage Temperature Range  
DIODE (SBD) D1  
CHARACTERISTIC  
SYMBOL  
VRM  
VR  
RATING  
UNIT  
V
Maximum (Peak) Reverse Voltage  
Reverse Voltage  
30  
30  
V
IFM  
Maximum (Peak) Forward Current  
Average Forward Current  
Surge Current (10mS)  
300  
IO  
200  
IFSM  
Tj  
1
A
Junction Temperature  
125  
Tstg  
Storage Temperature Range  
-55 125  
2003. 3. 11  
Revision No : 1  
1/4  

与KTX402U相关器件

型号 品牌 获取价格 描述 数据表
KTX403U KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH S
KTX404S KEC

获取价格

SOT-23
KTX411T KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
KTX411TGR KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
KTX411TY KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
KTX-485-D3AA KODENSHI

获取价格

2.5Gbps VCSEL TOSA
KTX511T KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
KTX512T KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
KTX598TF KEC

获取价格

N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
KTX601T KEC

获取价格

TS6