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KTX811T PDF预览

KTX811T

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
4页 50K
描述
TS6

KTX811T 数据手册

 浏览型号KTX811T的Datasheet PDF文件第2页浏览型号KTX811T的Datasheet PDF文件第3页浏览型号KTX811T的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KTX811T  
EPITAXIAL PLANAR NPN TRANSISTOR  
SILICON EPITAXIAL PLANAR TYPE DIODE  
TECHNICAL DATA  
TV Control board Application  
E
K
1
B
K
6
FEATURES  
DIM MILLIMETERS  
_
· One NPN Transistor (Q1)  
· Two Switching Diode (D1, D2)  
· Low Saturation Voltage  
A
B
C
D
E
2.9+0.2  
1.6+0.2/-0.1  
_
0.70+0.05  
_
+
0.4 0.1  
2
5
2.8+0.2/-0.3  
: VCE(sat) = 0.25V(Max)@ IC = 100mA, IB = 10mA  
· Suffix U : Qualified to AEC-Q101.  
ex) KTX811T-RTK/HU  
_
1.9+0.2  
F
G
H
I
3
4
0.95  
_
0.16+0.05  
0.00-0.10  
0.25+0.25/-0.15  
0.60  
J
K
L
0.55  
I
H
EQUIVALENT CIRCUIT (TOP VIEW)  
J
J
6
5
4
1. Q1 Emitter  
2. Q1 Base  
Marking  
3. D1 Cathode / D2 Anode  
4. D1 Anode  
6
1
5
4
3
Lot No.  
5. D2 Cathode  
D1  
D2  
6. Q1 Collector  
Q1  
Type Name  
T 8  
TS6  
2
1
2
3
MAXIMUM RATING (Ta=25)  
TRANSISTOR  
CHARACTERISTIC  
Collector-Base Voltage  
SYMBOL  
RATING  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
80  
80  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Base Current  
5
V
500  
100  
mA  
mA  
IB  
DIODE  
CHARACTERISTIC  
SYMBOL  
VRM  
VR  
RATING  
UNIT  
V
Maximum (Peak) Reverse Voltage  
Reverse Voltage  
80  
80  
V
IFM  
Maximum (Peak) Forward Current  
Average Forward Current  
Surge Current (100)  
300  
200  
4
mA  
mA  
A
IO  
IFSM  
COMMON  
CHARACTERISTIC  
SYMBOL  
*PD  
RATING  
900  
UNIT  
mW  
Power Dissipation  
Tj  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55~150  
* : Package mounted on a ceramic board (600mm2×0.8mm)  
2018. 04. 10  
Revision No : 3  
1/4  

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