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KTA1834L PDF预览

KTA1834L

更新时间: 2024-11-19 22:47:27
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 411K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTA1834L 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.84最大集电极电流 (IC):10 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz

KTA1834L 数据手册

 浏览型号KTA1834L的Datasheet PDF文件第2页浏览型号KTA1834L的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1834D/L  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
FEATURES  
Low Collector Saturation Voltage.  
: VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A)  
Large Collector Current  
A
C
I
J
DIM MILLIMETERS  
_
6.60+0.2  
_
6.10+0.2  
_
5.0+0.2  
_
1.10+0.2  
_
2.70+0.2  
_
2.30+0.1  
A
B
C
D
E
F
: IC=-10A(dc) IC=-15A(10ms, single pulse)  
Complementary to KTC5001D/L.  
H
I
1.00 MAX  
_
2.30+0.2  
_
0.5+0.1  
_
2.00+0.20  
_
0.50+0.10  
_
0.91+ 0.10  
_
0.90+0.1  
_
1.00+0.10  
J
H
K
L
M
O
P
P
F
L
F
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
1
2
3
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-30  
UNIT  
V
Q
0.95 MAX  
1. BASE  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltag  
2. COLLECTOR  
3. EMITTER  
-20  
V
-6  
V
DPAK  
-10  
Collector Current  
Base Current  
A
A
ICP  
-15  
IB  
-2  
A
C
I
J
1.0  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
PC  
W
10  
DIM MILLIMETERS  
_
6.60 0.2  
+
_
6.10 0.2  
+
A
B
C
D
E
F
Tj  
Junction Temperature  
150  
_
+
5.0 0.2  
_
1.10  
9.50  
2.30  
0.76  
+
0.2  
0.6  
0.1  
0.1  
Tstg  
Storage Temperature Range  
-55 150  
P
H
G
_
+
_
+
_
+
G
H
I
1.0 MAX  
_
2.30+0.2  
_
0.5 0.1  
+
_
2.0 0.2  
+
J
F
F
L
K
L
P
_
+
0.50 0.1  
_
+
0.1  
1.0  
0.90 MAX  
1
2
3
Q
1. BASE  
2. COLLECTOR  
3. EMITTER  
IPAK  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
IEBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-10  
UNIT  
VCB=-20V  
-
-
-
-
A
A
V
V
V
VEB=-5V  
IC=-50 A  
IC=-1mA  
IE=-50 A  
Emitter Cut-off Current  
-10  
BVCBO  
BVCEO  
BVEBO  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
-30  
-20  
-6  
180  
82  
-
hFE (1) (Note) VCE=-2V, IC=-0.5A  
-
390  
DC Current Gain  
hFE (2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=-2V, IC=-4.0A  
-
-
-0.25  
-1.2  
-
IC=-4.0A, IB=-0.05A  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
-0.16  
-0.9  
150  
220  
V
V
IC=-4A, IB=-0.05A  
-
VCE=-5V, IE=1.5A, f=50MHz  
VCB=-10V, IE=0, f=1MHz  
-
MHz  
pF  
Cob  
Collector Output Capacitance  
-
-
Note : hFE(1) Classification GR:180~390.  
2003. 3. 27  
Revision No : 5  
1/3  

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