SEMICONDUCTOR
KTA1943A
TRIPLE DIFFUSED PNP TRANSISTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
DIM MILLIMETERS
A
_
20.00+0.20
A
A1
B
FEATURES
A1
A1
8.30
Q
I
F1
F
· Complementary to KTC5200A.
· Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
_
20.00+0.20
_
6.00+0.20
B1
C
_
20.00+0.50
_
2.50+0.10
D
D1
E
_
1.50+0.20
9.00
9.00
0.50
1.00
2.00
E1
F
F1
G
H
I
J
K
MAXIMUM RATING (Ta=25℃)
4.00
_
K1
R
Φ3.30
+
0.20
S
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-230
-230
-5
UNIT
V
L
_
3.00+0.20
J
_
4.90+0.20
K
K1
L
M
M
_
2.50+0.20
1.00 +0.25/-0.10
Collector-Emitter Voltage
Emitter-Base Voltage
V
_
5.45 + 0.30
M
N
O
P
_
5.00+0.20
V
_
3.50+0.20
1
2
3
1.50
_
2.00 + 0.20
Collector Current
-15
A
1. BASE
Q
R
2. COLLECTOR
3. EMITTER
_
2.80+0.30
IB
Base Current
-1.5
A
S
0.60 +0.25/-0.10
PC
150
W
℃
℃
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Tj
150
TO-3P(L)
Tstg
Storage Temperature Range
-55∼ 150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
IEBO
TEST CONDITION
VCB=-230V, IE=0
MIN.
TYP.
-
MAX.
-5.0
-5.0
-
UNIT
-
μA
μA
V
VEB=-5V, IC=0
IC=-50mA, IB=0
Emitter Cut-off Current
-
-
V(BR)CEO
Collector-Emitter Breakdown Voltage
-230
-
hFE (1) (Note) VCE=-5V, IC=-1A
55
35
-
-
160
-
DC Current Gain
hFE (2)
VCE(sat)
VBE
VCE=-5V, IC=-7A
60
-1.5
-1.0
30
360
IC=-8A, IB=-800mA
VCE=-5V, IC=-7A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-3.0
-1.5
-
V
V
-
fT
VCE=-5V, IC=-1A
Transition Frequency
-
MHz
pF
Cob
VCB=-10V, IE=0, f=1MHz
Collector Output Capacitance
-
-
Note : hFE Classification
R:55~110, O:80~160.
2017. 01. 13
Revision No : 0
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