生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.2 A | 基于收集器的最大容量: | 3 pF |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KST6428L99Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN | |
KST6428S62Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN | |
KST6428TF | SAMSUNG |
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Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
KST6428TI | SAMSUNG |
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Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
KST6428TR | SAMSUNG |
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Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
KST64L99Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
KST64MTF | ROCHESTER |
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500mA, PNP, Si, SMALL SIGNAL TRANSISTOR | |
KST64MTF | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, | |
KST64TI | SAMSUNG |
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Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
KST64TR | SAMSUNG |
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Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |