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KST812M3 PDF预览

KST812M3

更新时间: 2024-01-09 06:43:56
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
3页 25K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

KST812M3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.92最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KST812M3 数据手册

 浏览型号KST812M3的Datasheet PDF文件第2页浏览型号KST812M3的Datasheet PDF文件第3页 
KST812M3/M4/M5/M6/M7  
General Purpose Transistor  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-40  
V
CEO  
EBO  
-5  
V
I
-100  
350  
150  
mA  
mW  
°C  
C
P
Collector Dissipation  
C
T
Storage Temperature  
STG  
Refer to KST5088 for graphs  
Electrical Characteristics T =25°C unless otherwise notedꢀ  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
-100  
-100  
Units  
I
I
Collector Cut-off Current  
V
V
= -40V, I =0  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
DC Current Gain  
= -5V, I =0  
C
h
FE  
: KST812M3  
V
= -6V, I = -1mA  
60  
90  
135  
200  
300  
120  
180  
270  
400  
600  
CE  
C
: KST812M4  
: KST812M5  
: KST812M6  
: KST812M7  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -30mA, I = -3mA  
-0.5  
-0.8  
V
V
CE  
C
B
V
= -6V, I = -1mA  
C
BE  
CE  
Marking Code  
Type  
KST812M3  
KST812M 4  
M4  
KST812M5  
M5  
KST812M6  
M6  
KST812M7  
M7  
Mark  
M3  
Marking  
M3  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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