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KST812M4 PDF预览

KST812M4

更新时间: 2024-02-21 19:16:25
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管晶体管
页数 文件大小 规格书
1页 30K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

KST812M4 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):90JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

KST812M4 数据手册

  

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