SMD Type
SMD Type
Transistors
PNP Transistors
KST8550
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Collector Current: IC=-1.5A
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-1.5
A
PC
0.3
W
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
Min
-40
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC=-100 A, IE=0
IC=-1mA, IB=0
V
V
IE=-100 A, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-5V, IC=0
-0.1
-1
A
Collector cut-off current
A
Emitter cut-off current
-0.1
400
A
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
120
40
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
output capacitance
VCE(sat) IC=-800mA, IB=-80mA
VBE(sat) IC=-800mA, IB=-80mA
VBE(on) IC=-1V,VCE=-10mA
-0.5
-1.2
-1
V
V
V
Cob
fT
VCB=-10V,IE=0,f=1MHz
VCE= -10V, IC= -50mA,f=30MHz
20
pF
MHz
Transition frequency
100
hFE(1) Classification
Type
Range
Marking
KST8550
200-350
KST8550-L KST8550-H KST8550-J
120-200 144-202 300-400
Y2
1
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