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Transistor
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Product specification
KST8050
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Collector Current: IC=1.5A
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
25
V
5
V
Collector Current -Continuous
Collector Dissipation
1.5
A
PC
0.3
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
40
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter-base cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC = 100 ìA , IE = 0
IC = 1mA , IB = 0
V
IE = 100 ìA , IC = 0
VCB = 40 V , IE = 0
VCE = 20 V , IB = 0
VEB = 5 V , IC = 0
V
0.1
0.1
0.1
400
A
A
A
VCE = 1 V , IC = 100 mA
VCE = 1 V , IC = 800 mA
120
40
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = 800 mA , IB = 80 mA
VBE(sat) IC = 800 mA , IB = 80 mA
0.5
1.2
V
V
fT
VCE = 10 V , IC = 50 mA , f = 30 MHz
100
MHz
hFE Classification
Y1
Marking
Rank
L
H
J
hFE
120 200
200 350
300 400
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