Datasheet > KST8050S_15

KST8050S_15

更新时间： 2024-02-14 02:01:22

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1000K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KST8050S_15 数据手册

SMD Type

Transistors

NPN Transistors

KST8050S

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Collector Current: IC=0.5A

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V^CBO

V^CEO

V^EBO

I^C

Collector Current -Continuous

Collector Dissipation

0.5

P^C

0.3

Junction Temperature

T^j

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base Breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter-base cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

I^CEO

I^EBO

IC = 100uA, I E = 0

IC = 1mA , IB = 0

IE = 100uA, I C = 0

VCB = 40 V , IE = 0

VCE = 20 V , IB = 0

VEB = 5 V , IC = 0

0.1

400

V^CE= 1 V , IC = 50 mA

V^CE= 1 V , IC = 500 mA

120

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)IC = 500 mA , IB = 50 mA

V^BE(sat)IC = 500 mA , IB = 50 mA

0.6

1.2

f^T

VCE = 6 V , IC = 20 mA , f = 30 MHz

150

MHz

■ Classification of hfe(1)

Type

Range

Marking

KST8050S

200-350

KST8050S-L

120-200

KST8050S-H

144-202

KST8050S-J

300-400

J3Y

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