KST2907A

更新时间： 2024-02-24 04:48:10

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
4页	56K
描述
General Purpose Transistor

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技术参数
数据手册

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KST2907A 技术参数

生命周期：	Obsolete	零件包装代码：	SOT-23
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.77	最大集电极电流 (IC)：	0.6 A
集电极-发射极最大电压：	40 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

KST2907A 数据手册

KST2907A

General Purpose Transistor

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

-60

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-60

CEO

EBO

-5

-600

350

150

°C

Collector Power Dissipation

Storage Temperature

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

* Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I = -10µA, I =0

-60

-5

CBO

CEO

EBO

I = -10mA, I =0

C B

I = -10µA, I =0

= -50V, I =0

-0.01

300

µA

CBO

DC Current Gain

= -10V, I = -0.1mA

100

= -10V, I = -1.0mA

= -10V, I = -10mA

*V = -10V, IC= -150mA

*V = -10V, I = -500mA

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

I = -150mA, I = -15mA

-0.4

-1.6

I = -500mA, I = -50mA

(sat)

I = -150mA, I = -15mA

-1.3

-2.6

I = -500mA, I = -50mA

I = -50mA, V = -20V

200

MHz

f=100MHz

Output Capacitance

Turn On Time

= -10V, I =0, f=1.0MHz

= -30V, I = -150mA

= -15mA

Turn Off Time

= -6V, I = -150mA

110

OFF

=I = -15mA

B1 B2

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Marking

Rev. A2, November 2002

12 3 4

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