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KST2907 PDF预览

KST2907

更新时间: 2024-01-18 07:20:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
4页 41K
描述
General Purpose Transistor

KST2907 数据手册

 浏览型号KST2907的Datasheet PDF文件第2页浏览型号KST2907的Datasheet PDF文件第3页浏览型号KST2907的Datasheet PDF文件第4页 
KST2907  
General Purpose Transistor  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-60  
Units  
V
V
V
V
I
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-40  
V
CEO  
EBO  
-5  
V
-600  
350  
150  
mA  
mW  
°C  
C
P
T
Collector Dissipation  
Storage Temperature  
C
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
* Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
BV  
I = -10µA, I =0  
-60  
-40  
-5  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA, I =0  
C B  
I = -10µA, I =0  
V
E
C
I
I
V
= -30V, V = -0.5V  
-50  
nA  
µA  
CEX  
CBO  
CE  
CB  
EB  
Collector Cut-off Current  
V
= -50V, I =0  
-0.02  
E
h
DC Current Gain  
V
V
V
= -10V, I = -0.1mA  
35  
50  
75  
FE  
CE  
CE  
CE  
C
= -10V, I = -1.0mA  
C
= -10V, I = -10mA  
C
*V = -10V, I = -150mA  
100  
30  
300  
CE  
C
*V = -10V, I = -500mA  
CE  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I = -150mA, I = -15mA  
-0.4  
-1.6  
V
V
CE  
BE  
C
B
I = -500mA, I = -50mA  
C
B
I = -150mA, I = -15mA  
-1.3  
-2.6  
V
V
C
B
I = -500mA, I = -50mA  
C
B
f
I = -50mA, V = -20V  
200  
MHz  
T
C
CE  
f=100MHz  
C
Output Capacitance  
Turn On Time  
V
= -10V, I =0, f=1.0MHz  
8.0  
45  
pF  
ns  
ob  
CB  
E
t
V
= -30V, I = -150mA  
C
ON  
CC  
I
= -15mA  
B1  
t
Turn Off Time  
V
= -6V, I = -150mA  
100  
ns  
OFF  
CC  
C
I
=I = -15mA  
B1 B2  
* Pulse Test: PW300µs, Duty Cycle2%  
Marking  
2B  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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