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KSP62TA PDF预览

KSP62TA

更新时间: 2024-02-13 12:03:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体管
页数 文件大小 规格书
4页 32K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

KSP62TA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:20 V配置:DARLINGTON
最小直流电流增益 (hFE):20000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
Base Number Matches:1

KSP62TA 数据手册

 浏览型号KSP62TA的Datasheet PDF文件第2页浏览型号KSP62TA的Datasheet PDF文件第3页浏览型号KSP62TA的Datasheet PDF文件第4页 
KSP62/63/64  
Darlington Transistor  
Collector-Emitter Voltage: V  
=KSP62: 20V  
CES  
KSP63/64: 30V  
Collector Power Dissipation: P (max)=625mW  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
CBO  
: KSP62  
: KSP63/64  
-20  
-30  
V
V
CEO  
EBO  
: KSP62  
: KSP63/64  
-20  
-30  
V
V
Emitter-Base Voltage  
Collector Current  
-10  
-500  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
T
150  
J
-55~150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I = -100µA, I =0  
CES  
C
B
: KSP62  
: KSP63/64  
-20  
-30  
V
V
I
I
Collector Cut-off Current  
: KSP62  
CBO  
V
V
= -15V, I =0  
= -30V, I =0  
E
-100  
-100  
nA  
nA  
CB  
CB  
E
: KSP63/64  
Emitter Cut-off Current  
V
= -10V, I =0  
-100  
nA  
EBO  
BE  
CE  
C
h
* DC Current Gain  
: KSP62  
FE  
V
= -5V, I = -10mA  
20K  
5K  
C
: KSP63  
: KSP64  
: KSP63  
: KSP64  
10K  
10K  
20K  
V
= -5V, I = -100mA  
C
CE  
V
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
CE  
: KSP62  
: KSP63/64  
I = -10mA, I = -0.01mA  
I = -100mA, I = -0.1mA  
C B  
-1.0  
-1.5  
V
V
C
B
* Base-Emitter On Voltage  
: KSP62  
BE  
V
V
= -5V, I = -10mA  
-1.4  
-2  
V
V
CE  
CE  
C
: KSP63/64  
= -5V, I = -100mA  
C
f
Current Gain Bandwidth Product  
: KSP63/64  
V
= -5V, I = -100mA  
125  
MHz  
T
CE  
C
f=100MHz  
* Pulse Test: PW300µs, Duty Cycle2%  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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