Datasheet > KSP64D74Z

KSP64D74Z

更新时间： 2024-11-25 04:17:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	33K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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KSP64D74Z 数据手册

KSP62/63/64

Darlington Transistor

•

Collector-Emitter Voltage: V

=KSP62: 20V

CES

KSP63/64: 30V

Collector Power Dissipation: P (max)=625mW

•

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

CBO

: KSP62

: KSP63/64

-20

-30

CEO

EBO

: KSP62

: KSP63/64

-20

-30

Emitter-Base Voltage

Collector Current

-10

-500

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

625

150

-55~150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

Collector-Emitter Breakdown Voltage

I = -100µA, I =0

CES

: KSP62

: KSP63/64

-20

-30

Collector Cut-off Current

: KSP62

CBO

= -15V, I =0

= -30V, I =0

-100

: KSP63/64

Emitter Cut-off Current

= -10V, I =0

-100

EBO

* DC Current Gain

: KSP62

= -5V, I = -10mA

20K

: KSP63

: KSP64

: KSP63

: KSP64

10K

20K

= -5V, I = -100mA

(sat)

(on)

* Collector-Emitter Saturation Voltage

: KSP62

: KSP63/64

I = -10mA, I = -0.01mA

I = -100mA, I = -0.1mA

C B

-1.0

-1.5

* Base-Emitter On Voltage

: KSP62

= -5V, I = -10mA

-1.4

-2

: KSP63/64

= -5V, I = -100mA

Current Gain Bandwidth Product

: KSP63/64

= -5V, I = -100mA

125

MHz

f=100MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A1, July 2001

12 3 4

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