Datasheet > KSP6520D75Z

KSP6520D75Z

更新时间： 2023-02-26 15:06:48

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	23K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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KSP6520D75Z 数据手册

KSP6520/6521

Amplifier Transistor

•

Collector-Emitter Voltage: V

=25V

CEO

Collector Power Dissipation: P (max)=625mW

Refer to 2N3904 for graphs

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

100

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

625

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typl

Max.

Units

Collector-Emitter Breakdown Voltage I =0.5mA, I =0

CEO

EBO

Emitter Base Breakdown Voltage

Collector Cut-off Current

I =10, I =0

C C

=30V, I =0

CBO

=20V, I =0

DC Current Gain

: KSP6520

I =100µA, V =10V

100

150

200

300

: KSP6521

: KSP6520

: KSP6521

I =2mA, V =10V

400

600

(sat)

Collector-Emitter Saturation Voltage

Output Capacitance

I =50mA, I =5mA

0.5

3.5

=10V, I =0

f=100KHz

Noise Figure

I =10µA, V =5V

R =10KΩ

f=10Hz to 10KHz

Rev. A1, July 2001

12 3

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