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KSP77 PDF预览

KSP77

更新时间: 2024-09-27 22:47:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管达林顿晶体管
页数 文件大小 规格书
4页 34K
描述
Darlington Transistor

KSP77 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.88Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KSP77 数据手册

 浏览型号KSP77的Datasheet PDF文件第2页浏览型号KSP77的Datasheet PDF文件第3页浏览型号KSP77的Datasheet PDF文件第4页 
KSP75/76/77  
Darlington Transistor  
Collector-Emitter Voltage: V  
= KSP75: 40V  
CES  
KSP76: 50V  
KSP77: 60V  
Collector Power Dissipation: P (max)=625mW  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
CES  
: KSP75  
: KSP76  
: KSP77  
-40  
-50  
-60  
V
V
V
V
Emitter-Base Voltage  
Collector Current  
-10  
-500  
V
EBO  
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
T
150  
J
-55~150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
I = -100µA, I =0  
CEO  
C
B
: KSP75  
: KSP76  
: KSP77  
-40  
-50  
-60  
V
V
V
BV  
Collector-Base Breakdown Voltage  
I = -100µA, I =0  
C E  
CBO  
: KSP75  
: KSP76  
: KSP77  
-40  
-50  
-60  
V
V
V
I
Collector Cut-off Current  
: KSP75  
nA  
nA  
nA  
nA  
CBO  
V
V
V
= -30V, I =0  
-100  
-100  
-100  
CE  
CE  
CE  
E
: KSP76  
: KSP77  
= -40V, I =0  
E
= -50V, I =0  
E
I
I
Emitter Cut-off Current  
V
= -10V, I =0  
-100  
nA  
EBO  
CE  
B
Collector Cut-off Current  
: KSP75  
CES  
V
V
V
= -30V, I =0  
-500  
-500  
-500  
nA  
nA  
nA  
CE  
CE  
CE  
E
: KSP76  
: KSP77  
= -40V, I =0  
E
= -50V, I =0  
E
h
DC Current Gain  
V
V
= -5V, I = -10mA  
10K  
10K  
FE  
CE  
CE  
C
= -5V, I = -100mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -100mA, I = -0.1mA  
-1.5  
2
V
V
CE  
C
B
V
= -5V, I = -100mA  
C
BE  
CE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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