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KSP8099J05Z PDF预览

KSP8099J05Z

更新时间: 2024-01-07 04:41:41
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 61K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

KSP8099J05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.75
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):75
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

KSP8099J05Z 数据手册

 浏览型号KSP8099J05Z的Datasheet PDF文件第2页浏览型号KSP8099J05Z的Datasheet PDF文件第3页 
KSP8098/8099  
NPN EPITAXIAL SILICON TRANSISTOR  
AMPLIFIER TRANSISTOR  
· Collector-Emitter Voltage: VCEO= KSP8098: 60V  
KSP8099: 80V  
TO-92  
· Collector Dissipation: PC (max)=625mW  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
VCBO  
Rating  
Unit  
Collector-Base Voltage  
: KSP8098  
: KSP8099  
Collector-Emitter Voltage  
60  
80  
V
V
VCEO  
: KSP8098  
: KSP8099  
60  
80  
V
V
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
PC  
TJ  
TSTG  
6
500  
625  
150  
V
mA  
mW  
°C  
°C  
-55 ~ 150  
1. Emitter 2. Base 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Max  
Unit  
Collector-Base Breakdown Voltage  
: KSP8098  
BVCBO  
IC=100mA, IE=0  
60  
80  
V
V
: KSP8099  
*Collector-Emitter Breakdown Voltage  
: KSP8098  
IC=10mA, IB=0  
BVCEO  
V
V
V
60  
80  
6
: KSP8099  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
: KSP8098  
IE=10mA, IC=0  
BVEBO  
ICBO  
VCB=60V, IE=0  
VCB=80V, IE=0  
VEB=60V, IB=0  
VEB=6V, IC=0  
VCE=5V, IC=1mA  
VCE=5V, IC=10mA  
VCE=5V, IC=100mA  
IC=100mA, IB=5mA  
IC=100mA, IB=10mA  
nA  
nA  
nA  
nA  
100  
100  
100  
100  
300  
: KSP8099  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICEO  
IEBO  
hFE  
100  
100  
75  
Collector-Emitter Saturation Voltage  
VCE (sat)  
VBE (on)  
V
V
0.4  
0.3  
*Base-Emitter On Voltage  
: KSP8098  
: KSP8099  
Current Gain Bandwidth Product  
VCE=5V, IC=1mA  
VCE=5V, IC=10mA  
VCE=5V, IC=10mA  
f=100MHz  
V
V
MHz  
0.7  
0.8  
0.5  
0.6  
150  
fT  
VCB=5V, IE=0  
f=1MHz  
Output Capacitance  
pF  
6
COB  
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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