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KSP8598TA PDF预览

KSP8598TA

更新时间: 2024-10-01 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管
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4页 37K
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KSP8598TA 数据手册

 浏览型号KSP8598TA的Datasheet PDF文件第2页浏览型号KSP8598TA的Datasheet PDF文件第3页浏览型号KSP8598TA的Datasheet PDF文件第4页 
KSP8598/8599  
Amplifier Transistor  
Collector-Emitter Voltage: V  
= KSP8598: 60V  
CEO  
KSP8599: 80V  
Collector Power Dissipation: P (max)=625mW  
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
CBO  
: KSP8598  
: KSP8599  
-60  
-80  
V
V
CEO  
EBO  
: KSP8598  
: KSP8599  
-60  
-80  
V
V
Emitter-Base Voltage  
Collector Current  
-5  
-500  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
: KSP8598  
I = -100µA, I =0  
CBO  
CEO  
EBO  
C
E
-60  
-80  
V
V
: KSP8599  
BV  
* Collector-Emitter Breakdown Voltage  
I = -10mA, I =0  
C B  
: KSP8598  
: KSP8599  
-60  
-80  
V
V
BV  
Emitter-Base Breakdown Voltage  
I = -10µA, I =0  
-5  
V
E
C
I
Collector Cut-off Current  
: KSP8598  
CBO  
V
= -60V, I =0  
= -80V, I =0  
E
-100  
-100  
nA  
nA  
CB  
CB  
E
: KSP8599  
V
V
V
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
= -60V, I =0  
-100  
-100  
300  
nA  
nA  
CEO  
CE  
EB  
B
= -4V, I =0  
EBO  
C
h
V
V
V
= -5V, I = -1mA  
100  
100  
75  
FE  
CE  
CE  
CE  
C
= -5V, I = -10mA  
C
= -5V, I = -100mA  
C
V
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
I = -100mA, I = -5mA  
-0.4  
-0.3  
V
V
CE  
BE  
C
B
I = -100mA, I = -10mA  
C
B
* Base-Emitter On Voltage  
: KSP8598  
V
V
= -5V, I = -1mA  
= -5V, I = -10mA  
C
-0.5  
-0.6  
-0.7  
-0.8  
V
V
CE  
CE  
C
: KSP8599  
f
Current Gain Bandwidth Product  
V
= -5V, I = -10mA  
150  
MHz  
T
CE  
C
f=100MHz  
C
Output Capacitance  
V
= -5V, I =0  
8
pF  
ob  
CB  
E
f=1MHz  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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