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KSP6521D75Z PDF预览

KSP6521D75Z

更新时间: 2024-01-01 05:56:14
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 23K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSP6521D75Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):300
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

KSP6521D75Z 数据手册

 浏览型号KSP6521D75Z的Datasheet PDF文件第2页浏览型号KSP6521D75Z的Datasheet PDF文件第3页 
KSP6520/6521  
Amplifier Transistor  
Collector-Emitter Voltage: V  
=25V  
CEO  
Collector Power Dissipation: P (max)=625mW  
Refer to 2N3904 for graphs  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
25  
V
CEO  
EBO  
4
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
25  
4
Typl  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage I =0.5mA, I =0  
V
V
CEO  
EBO  
C
B
BV  
Emitter Base Breakdown Voltage  
Collector Cut-off Current  
I =10, I =0  
C C  
I
V
=30V, I =0  
50  
50  
nA  
nA  
CBO  
CB  
CE  
E
V
=20V, I =0  
E
h
DC Current Gain  
FE  
: KSP6520  
I =100µA, V =10V  
100  
150  
200  
300  
C
CE  
: KSP6521  
: KSP6520  
: KSP6521  
I =2mA, V =10V  
400  
600  
C
CE  
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =50mA, I =5mA  
0.5  
3.5  
V
CE  
C
B
C
V
=10V, I =0  
pF  
ob  
CB  
E
f=100KHz  
NF  
Noise Figure  
I =10µA, V =5V  
3
dB  
C
CE  
R =10KΩ  
S
f=10Hz to 10KHz  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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