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KSP2907A PDF预览

KSP2907A

更新时间: 2024-11-29 22:47:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
4页 37K
描述
General Purpose Transistor

KSP2907A 数据手册

 浏览型号KSP2907A的Datasheet PDF文件第2页浏览型号KSP2907A的Datasheet PDF文件第3页浏览型号KSP2907A的Datasheet PDF文件第4页 
KSP2907A  
General Purpose Transistor  
Collector-Emitter Voltage: V  
Collector Power Dissipation: P (max)=625mW  
Refer to KSP2907 for graphs  
= 60V  
CEO  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-60  
V
CEO  
EBO  
-5  
V
I
-600  
625  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-60  
-60  
-5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
I = -10µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
* Collector Emitter Breakdown Voltage I = -10mA, I =0  
C B  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
DC Current Gain  
I = -10µA, I =0  
V
E
C
I
V
= -50V, I =0  
-10  
nA  
CBO  
CB  
E
h
I = -0.1mA, V = -10V  
75  
100  
100  
100  
50  
FE  
C
CE  
V
= -10V, I = -1mA,  
CE  
CE  
CE  
CE  
C
V
V
V
= -10V , I = -10mA  
C
= -10V, *I = -150mA  
300  
C
= -10V, *I = -500mA  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
Output Capacitance  
I = -150mA, I = -15mA  
-0.4  
-1.6  
V
V
CE  
C
B
I = -500mA, I = -50mA  
C
B
(sat)  
I = -150mA, I = -15mA  
-1.3  
-2.6  
V
V
BE  
C
B
I = -500mA, I = -50mA  
C
B
C
V
= -10V, I =0  
8
pF  
MHz  
ns  
ob  
CB  
E
f=1MHz  
f
t
t
* Current Gain Bandwidth Product  
Turn On Time  
I = -50mA, V = -20V  
200  
T
C
CE  
f=100MHz  
V
= -30V, I = -150mA  
45  
ON  
CC  
C
I
= -15mA  
B1  
Turn Off Time  
V
= -6V, I = -150mA  
100  
ns  
OFF  
CC  
C
I
=I = -15mA  
B1 B2  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
* Also available as and PN2907  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, February 2002  

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