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KSP2907J05Z PDF预览

KSP2907J05Z

更新时间: 2024-12-02 08:21:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 54K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

KSP2907J05Z 数据手册

 浏览型号KSP2907J05Z的Datasheet PDF文件第2页浏览型号KSP2907J05Z的Datasheet PDF文件第3页 
KSP2907  
PNP EPITAXIAL SILICON TRANSISTOR  
GENERAL PURPOSE TRANSISTOR  
TO-92  
· Collector-Emitter Voltage: VCEO= 40V  
· Collector Dissipation: PC(max)=625mW  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
-60  
-40  
-5  
-600  
625  
150  
V
V
V
mA  
mW  
°C  
°C  
VCEO  
VEBO  
IC  
PC  
TJ  
TSTG  
-55~150  
1. Emitter 2. Base 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
IC= -10mA, IE=0  
IC= -10mA, IB=0  
IE= -10mA, IC=0  
VCB= -50V, IE=0  
IC= -0.1mA, VCE= -10V  
IC= -1mA, VCE= -10V  
IC= -10mA, VCE= -10V  
*IC= -150mA, VCE= -10V  
*IC= -500mA, VCE= -10V  
IC= -150mA, IB= -15mA  
IC= -500mA, IB= -50mA  
IC= -150mA, IB= -15mA  
IC= -500mA, IB= -50mA  
Collector-Base Breakdown Voltage  
*Collector Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-60  
-40  
-5  
V
V
V
nA  
-20  
DC Current Gain  
hFE  
35  
50  
75  
100  
30  
300  
*Collector-Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
Output Capacitance  
-0.4  
-1.6  
-1.3  
-2.6  
8
VCE (sat)  
VCE (sat)  
COB  
V
V
V
V
pF  
VCB= -10V, IE=0  
f=1MHz  
*Current Gain Bandwidth Product  
IC= -50mA, VCE= -20V  
f=100MHz  
VCC= -30V, IC= -150mA  
IB1= -15mA  
fT  
250  
MHz  
ns  
Turn On Time  
Turn Off Time  
tON  
45  
VCC= -6V, IC= -150mA  
IB1=IB2=15mA  
tOFF  
ns  
100  
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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