Datasheet > KSP2907J18Z

KSP2907J18Z

更新时间： 2024-12-02 05:12:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	54K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

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KSP2907J18Z 数据手册

KSP2907

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

TO-92

· Collector-Emitter Voltage: V_CEO= 40V

· Collector Dissipation: P_C(max)=625mW

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

V_CBO

-60

-40

-5

-600

625

150

°C

V_CEO

V_EBO

I_C

P_C

T_J

T_STG

-55~150

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

I_C= -10mA, I_E=0

I_C= -10mA, I_B=0

I_E= -10mA, I_C=0

V_CB= -50V, I_E=0

I_C= -0.1mA, V_CE= -10V

I_C= -1mA, V_CE= -10V

I_C= -10mA, V_CE= -10V

*I_C= -150mA, V_CE= -10V

*I_C= -500mA, V_CE= -10V

I_C= -150mA, I_B= -15mA

I_C= -500mA, I_B= -50mA

I_C= -150mA, I_B= -15mA

I_C= -500mA, I_B= -50mA

Collector-Base Breakdown Voltage

*Collector Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BV_CBO

BV_CEO

BV_EBO

I_CBO

-60

-40

-5

-20

DC Current Gain

h_FE

100

300

*Collector-Emitter Saturation Voltage

Base Emitter Saturation Voltage

Output Capacitance

-0.4

-1.6

-1.3

-2.6

V_CE(sat)

C_OB

V_CB= -10V, I_E=0

f=1MHz

*Current Gain Bandwidth Product

I_C= -50mA, V_CE= -20V

f=100MHz

V_CC= -30V, I_C= -150mA

I_B1= -15mA

f_T

250

MHz

Turn On Time

Turn Off Time

t_ON

V_CC= -6V, I_C= -150mA

I_B1=I_B2=15mA

t_OFF

100

* Pulse Test: Pulse Width£300ms, Duty Cycle£2%

Rev. B

1999 Fairchild Semiconductor Corporation

12 3

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